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PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
Rev. 02 -- 20 August 2009 Product data sheet
1. Product profile
1.1 General description
Bidirectional ElectroStatic Discharge (ESD) protection diodes in a very small SOD323 (SC-76) SMD plastic package designed to protect one signal line from the damage caused by ESD and other transients.
1.2 Features
I I I I Bidirectional ESD protection of one line Max. peak pulse power: Ppp = 500 W Low clamping voltage: V(CL)R = 26 V Ultra low leakage current: IRM < 0.09 A I I I I ESD protection > 23 kV IEC 61000-4-2, level 4 (ESD) IEC 61000-4-5 (surge); Ipp = 18 A Very small SMD plastic package
1.3 Applications
I Computers and peripherals I Communication systems I Audio and video equipment I Data lines I CAN bus protection
1.4 Quick reference data
Table 1. Symbol VRWM Quick reference data Parameter reverse stand-off voltage PESD3V3L1BA PESD5V0L1BA PESD12VL1BA PESD15VL1BA PESD24VL1BA Cd diode capacitance PESD3V3L1BA PESD5V0L1BA PESD12VL1BA PESD15VL1BA PESD24VL1BA VR = 0 V; f = 1 MHz 101 75 19 16 11 pF pF pF pF pF 3.3 5.0 12 15 24 V V V V V Conditions Min Typ Max Unit
NXP Semiconductors
PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
2. Pinning information
Table 2. Pin 1 2 Pinning Description cathode 1 cathode 2
1 2 1
sym045
Simplified outline
Symbol
2
3. Ordering information
Table 3. Ordering information Package Name PESDxL1BA series SC-76 Description plastic surface mounted package; 2 leads Version SOD323 Type number
4. Marking
Table 4. Marking codes Marking code AB AC AD AE AF Type number PESD3V3L1BA PESD5V0L1BA PESD12VL1BA PESD15VL1BA PESD24VL1BA
PESDXL1BA_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 20 August 2009
2 of 15
NXP Semiconductors
PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Ppp Parameter peak pulse power PESD3V3L1BA PESD5V0L1BA PESD12VL1BA PESD15VL1BA PESD24VL1BA Ipp peak pulse current PESD3V3L1BA PESD5V0L1BA PESD12VL1BA PESD15VL1BA PESD24VL1BA Tj Tamb Tstg
[1]
Conditions 8/20 s
[1]
Min -
Max 500 500 200 200 200 18 15 5 5 3 150 +150 +150
Unit W W W W W A A A A A C C C
8/20 s
[1]
-65 -65
junction temperature ambient temperature storage temperature
Non-repetitive current pulse 8/20 s exponential decay waveform; see Figure 1.
Table 6. Symbol ESD
ESD maximum ratings Parameter electrostatic discharge capability PESD3V3L1BA PESD5V0L1BA PESD12VL1BA PESD15VL1BA PESD24VL1BA PESDxL1BA series HBM MIL-Std 883 Conditions IEC 61000-4-2 (contact discharge)
[1]
Min
Max
Unit
-
30 30 30 30 23 10
kV kV kV kV kV kV
[1]
Device stressed with ten non-repetitive ESD pulses; see Figure 2.
Table 7. Standard
ESD standards compliance Conditions > 15 kV (air); > 8 kV (contact) > 4 kV
IEC 61000-4-2; level 4 (ESD); Figure 2 HBM MIL-Std 883; class 3
PESDXL1BA_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 20 August 2009
3 of 15
NXP Semiconductors
PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
001aaa631
120 IPP (%) 80 100 % IPP; 8 s
001aaa630
IPP 100 % 90 %
e-t 50 % IPP; 20 s
40
10 % tr = 0.7 ns to 1 ns 0 10 20 30 t (s) 40 30 ns 60 ns t
0
Fig 1.
8/20 s pulse waveform according to IEC 61000-4-5
Fig 2.
ESD pulse waveform according to IEC 61000-4-2
PESDXL1BA_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 20 August 2009
4 of 15
NXP Semiconductors
PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
6. Characteristics
Table 8. Characteristics Tamb = 25 C unless otherwise specified Symbol VRWM Parameter reverse stand-off voltage PESD3V3L1BA PESD5V0L1BA PESD12VL1BA PESD15VL1BA PESD24VL1BA IRM reverse leakage current PESD3V3L1BA PESD5V0L1BA PESD12VL1BA PESD15VL1BA PESD24VL1BA V(BR) breakdown voltage PESD3V3L1BA PESD5V0L1BA PESD12VL1BA PESD15VL1BA PESD24VL1BA Cd diode capacitance PESD3V3L1BA PESD5V0L1BA PESD12VL1BA PESD15VL1BA PESD24VL1BA V(CL)R clamping voltage PESD3V3L1BA PESD5V0L1BA PESD12VL1BA PESD15VL1BA PESD24VL1BA Ipp = 1 A Ipp = 18 A Ipp = 1 A Ipp = 15 A Ipp = 1 A Ipp = 5A Ipp = 1 A Ipp = 5 A Ipp = 1 A Ipp = 3 A
[1]
Conditions
Min -
Typ 0.09 0.01 <1 <1 <1 6.4 7.6 15.9 18.9 27.8
Max 3.3 5.0 12 15 24 2 1 50 50 50 6.9 8.2 16.7 20.3 30.3
Unit V V V V V A A nA nA nA V V V V V
see Figure 7 VRWM = 3.3 V VRWM = 5.0 V VRWM = 12 V VRWM = 15 V VRWM = 24 V IR = 5 mA 5.8 7.0 14.2 17.1 25.4 VR = 0 V; f = 1 MHz; see Figure 5 and 6 101 75 19 16 11 8 26 10 33 20 37 25 44 40 70 pF pF pF pF pF V V V V V V V V V V -
PESDXL1BA_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 20 August 2009
5 of 15
NXP Semiconductors
PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
Table 8. Characteristics ...continued Tamb = 25 C unless otherwise specified Symbol rdif Parameter differential resistance PESD3V3L1BA PESD5V0L1BA PESD12VL1BA PESD15VL1BA PESD24VL1BA
[1] Non-repetitive current pulse 8/20 s exponential decay waveform; see Figure 1.
Conditions IR = 1 mA
Min -
Typ -
Max 400 80 200 225 300
Unit
PESDXL1BA_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 20 August 2009
6 of 15
NXP Semiconductors
PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
104 PPP (W) 103
006aaa066
1.2 PPP PPP(25C) 0.8
001aaa193
(1)
102
(2)
0.4
10 1 10
102
103 t p (s)
104
0 0 50 100 150 Tj (C) 200
Tamb = 25 C tp = 8/20 s exponential decay waveform; see Figure 1 (1) PESD3V3L1BA and PESD5V0L1BA (2) PESD12VL1BA; PESD15VL1BA; PESD24VL1BA
Fig 3.
Peak pulse power dissipation as a function of pulse time; typical values
Fig 4.
Relative variation of peak pulse power as a function of junction temperature; typical values
20
006aaa068
110 Cd (pF) 100
006aaa067
Cd (pF) 16
90
(1)
12
(1)
80 8 70
(2) (2) (3)
60
4
50 0 1 2 3 4 VR (V) 5
0 0 5 10 15 20 VR (V) 25
Tamb = 25 C; f = 1 MHz (1) PESD3V3L1BA (2) PESD5V0L1BA
Tamb = 25 C; f = 1 MHz (1) PESD12VL1BA (2) PESD15VL1BA (3) PESD24VL1BA
Fig 5.
Diode capacitance as a function of reverse voltage; typical values
Fig 6.
Diode capacitance as a function of reverse voltage; typical values
PESDXL1BA_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 20 August 2009
7 of 15
NXP Semiconductors
PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
10 IRM IRM(25C)
006aaa069
(1)
1
10-1 -100
-50
0
50
100 Tj (C)
150
(1) PESD3V3L1BA; PESD5V0L1BA For PESD12VL1BA, PESD15VL1BA and PESD24VL1BA, IRM < 20 nA at 150 C
Fig 7.
Relative variation of reverse leakage current as a function of junction temperature; typical values
PESDXL1BA_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 20 August 2009
8 of 15
NXP Semiconductors
PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
ESD TESTER RZ CZ
450
RG 223/U 50 coax
4 GHz DIGITAL OSCILLOSCOPE 10x ATTENUATOR
50
1
IEC 61000-4-2 network CZ = 150 pF; RZ = 330 2
DUT: PESDxL1BA
vertical scale = 200 V/div horizontal scale = 50 ns/div
vertical scale = 20 V/div; horizontal scale = 50 ns/div PESD24VL1BA GND PESD15VL1BA GND PESD12VL1BA GND PESD5V0L1BA GND
GND GND unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network)
PESD3V3L1BA
clamped +1 kV ESD voltage waveform (IEC 61000-4-2 network)
vertical scale = 20 V/div; horizontal scale = 50 ns/div GND GND PESD3V3L1BA
GND GND
PESD5V0L1BA
PESD12VL1BA
GND
PESD15VL1BA
GND PESD24VL1BA vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped -1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped -1 kV ESD voltage waveform (IEC 61000-4-2 network)
006aaa070
Fig 8.
ESD clamping test setup and waveforms
PESDXL1BA_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 20 August 2009
9 of 15
NXP Semiconductors
PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
7. Application information
The PESDxL1BA series is designed for bidirectional protection of one signal line from the damage caused by ElectroStatic Discharge (ESD) and surge pulses. The PESDxL1BA series may be used on lines where the signal polarity is above and below ground. The PESDxL1BA series provides a surge capability of up to 500 W per line for a 8/20 s waveform.
line to be protected
PESDxL1BA
006aaa071
ground
Fig 9.
Typical application: Bidirectional protection of one signal line
Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the protection device as close to the input terminal or connector as possible. 2. The path length between the protection device and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductor. 5. Minimize all printed-circuit board conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer printed-circuit boards, use ground vias.
PESDXL1BA_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 20 August 2009
10 of 15
NXP Semiconductors
PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
8. Package outline
Plastic surface-mounted package; 2 leads SOD323
D
A
E
X
HD
v
M
A
Q
1
2
bp A
A1
(1)
c Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.05 bp 0.40 0.25 c 0.25 0.10 D 1.8 1.6 E 1.35 1.15 HD 2.7 2.3 Lp 0.45 0.15 Q 0.25 0.15 v 0.2
Note 1. The marking bar indicates the cathode OUTLINE VERSION SOD323 REFERENCES IEC JEDEC JEITA SC-76 EUROPEAN PROJECTION ISSUE DATE 03-12-17 06-03-16
Fig 10. Package outline SOD323 (SC-76)
PESDXL1BA_SER_2 (c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 20 August 2009
11 of 15
NXP Semiconductors
PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
9. Packing information
Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PESDxL1BA series
[1]
Package SOD323
Description 4 mm pitch, 8 mm tape and reel
Packing quantity 3000 -115 10000 -135
For further information and the availability of packing methods, see Section 12.
PESDXL1BA_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 20 August 2009
12 of 15
NXP Semiconductors
PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
10. Revision history
Table 10. Revision history Release date 20090820 Data sheet status Product data sheet Change notice Supersedes PESDXL1BA_SER_1 Document ID PESDXL1BA_SER_2 Modifications:
* *
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. Figure 10 "Package outline SOD323 (SC-76)": updated Product data sheet -
PESDXL1BA_SER_1
20041004
PESDXL1BA_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 20 August 2009
13 of 15
NXP Semiconductors
PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
11. Legal information
11.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
11.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PESDXL1BA_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 20 August 2009
14 of 15
NXP Semiconductors
PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
13. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Application information. . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Packing information. . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 20 August 2009 Document identifier: PESDXL1BA_SER_2

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